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Patent • #9,276,382. Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are...

Patent • #8,400,349. The spurious-free dynamic range of a wideband radar system is increased by apportioning de-ramp processing across analog and digital processing domains. A chirp rate offset is applied between the received waveform and the reference waveform that is used for downconversion to the intermediate frequency (IF) range. The chirp rate...

Patent • #12061249. Various technologies pertaining to forming a very high instantaneous bandwidth (IBW) radar signal based upon several radio frequency (RF) signals that have sub-bands of the frequency band of the radar signal are described herein. A radar system is configured to address local oscillator leakage across multiple transmit channels of...

Patent • #9,846,229. The various technologies presented herein relate to utilizing direction of arrival (DOA) data to determine various flight parameters for an aircraft A plurality of radar images (e.g., SAR images) can be analyzed to identify a plurality of pixels in the radar images relating to one or more ground targets....

Patent • #11,549,761.

Patent • #11,287,536. A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer...

Patent • #6,563,907. Employing a source of radiation, such as an electric discharge source, that is equipped with a capillary region configured into some predetermined shape, such as an arc or slit, can significantly improve the amount of flux delivered to the lithographic wafers while maintaining high efficiency. The source is particularly...

Patent • #7,298,010. A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected...

Patent • #10,879,552. A electrochemical storage device, referred to herein as a radical-ion battery, is described. The radical-ion battery includes an electrolyte, first free radicals, and second free radicals, wherein the first free radicals and the second free radicals are different chemical species. The radical-ion battery also includes a separator that allows...

Patent • #11721448. A container holds radioactive material. A sub-criticality controller protects the radioactive material from reaching a criticality from contact with the water. The sub-criticality controller includes a metallic composition having at least one metal component and at least one borate component bonded to the at least one metal component. The...

Patent • #11808800. An interferometric radioimager provides real-time, high-fidelity radioimaging of high voltage breakdown (HVB) both internal and external to electrical components at sub-nanosecond and sub-millimeter resolution and has an ability to resolve multiple/spatially-extensive HVB simultaneously. Therefore, radioimaging can be used to screen for early life weakness/failure and enable non-destructive screening of...

Patent • #10,706,181. Described herein are various technologies pertaining to randomizing logic associated with dangling nodes in a digital circuit design. A dangling node is an input to or output from a logic gate in the digital circuit design that is identified as not impacting a desired output of the digital circuit...

Patent • #10,724,120. The ability to generate complex gallium alloys using metal amides, Ga(NR.sub.2).sub.3 and M(NR.sub.2).sub.n, is easily accomplished by heating the two metal amides in predetermined ratios. The product can be isolated as Ga.sub.xM.sub.y where x and y can vary.

Patent • #10,393,933. Tunable filters can use Fano metasurface designs having extremely narrow transmission bands. The Fano metasurface can comprise dielectric or semiconductor materials and can produce transmission bands with quality factors well in excess of 1000--at least a factor of 50 greater than typical metamaterial-based infrared resonances. Numerical simulations of these...

Patent • #8,585,928. A family of rare-earth Group 5 oxides, where the Group 5 oxide is a niobate or tantalate. The rare-earth Group 5 oxides can be doped with suitable emitter ions to form nanophosphors.