Selective layer disordering in III-nitrides with a capping layer

DWPI Title: Method for facilitating selective layer disordering in III-nitrides, involves annealing heterostructure at annealing temperature to suppress disordering of heterostructure layer interfaces under capped portion
Abstract: Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.
Use: Method for facilitating selective layer disordering in III-nitrides with a capping layer. Can also be used for creating a device e.g. optical waveguide, LED, photodetector, solar cell, modulator, laser and amplifier.
Advantage: The method enables annealing the heterostructure at the annealing temperature and time sufficient to induce disordering of the heterostructure layer interfaces under the uncapped portion and suppress disordering of the interfaces under the capped portion such that higher bandgap region of a laser diode is created near the output faces, thus preventing optical damage.
Novelty: The method involves growing III-nitride heterostructure (11) on a substrate (12) at a growth temperature chosen to prevent layer disordering, where heterostructure layers are doped with an impurity during growth. A dielectric capping layer (15) is deposited on a capped portion (16) of a surface of the heterostructure that provides the capped portion and an uncapped portion (17) and anneals the heterostructure at an annealing temperature and induces disordering of heterostructure layer interfaces under the uncapped portion and suppress disordering of the interfaces under the portion.
Filed: 11/13/2014
Application Number: US14540686A
Tech ID: SD 12845.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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