Piezoelectric deformable photonic devices
| DWPI Title: Complementary metal oxide semiconductor-compatible piezoelectric deformable photonic device platform for phase, amplitude and frequency modulation in silicon nitride photonic integrated circuits, comprises first contact layer that is adapted to route actuation bias, where dielectric layer is formed |
| Abstract: A CMOS-compatible actuator platform for implementing phase, amplitude, and frequency modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators is disclosed. The platform, which may be fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic operating temperatures. A number of devices are possible, including ring modulator devices, phase shifter devices, Mach-Zehnder interferometer devices, directional coupler devices (including tunable directional coupler devices), and acousto-optic modulator and frequency shifter devices, each of which can employ the same AlN actuator platform. As all of these devices can be built on the same AlN actuator platform, numerous optical functions can be implemented on a single die. |
| Use: Complementary metal oxide semiconductor-compatible piezoelectric deformable photonic device platform for the phase, amplitude and frequency modulation in the silicon nitride photonic integrated circuits. Can also be used in the phase shifters, acousto-optic modulators and the frequency shifters. |
| Advantage: The modulator enables scalable active photonic integrated circuits for visible wavelengths and the piezoelectric actuation functions without performance degradation down to cryogenic temperatures. The modulator improves responsivity while preserving the optical quality factor. |
| Novelty: The complementary metal oxide semiconductor-compatible piezoelectric deformable photonic device platform comprises a first contact layer that is adapted to route an actuation bias. A dielectric layer is formed on the first contact layer, where a second contact layer is formed on the dielectric layer. The second contact layer is adapted to receive a first polarity of the actuation bias. A piezoelectric material layer is formed on the second contact layer. A first cladding layer is formed on a third contact. The piezoelectric material layer is formed of aluminum nitride (820) and an alloy of aluminum nitride-thiocyanate. A waveguide is formed of silicon nitride, aluminum oxide, aluminum nitride and doped silicon dioxide. The first and second cladding layers are formed of silicon dioxide and silicon nitride. |
| Filed: 8/10/2020 |
| Application Number: US16989535A |
| Tech ID: SD 14944.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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