Optical NOR gate
| DWPI Title: Optical NOR gate has photodetectors that receive digital optical inputs to generate photocurrent signal, which changes reverse-bias voltage on electroabsorption modulators |
| Abstract: An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 μm. |
| Use: Optical NOR gate. |
| Advantage: Optical isolation of input and output signals is improved, while enhancing the ability to be monolithically integrated and the ability to operate using direct-current electrical power sources with a relatively low power consumption and a relatively compact size. The optical NOR gate provides optical signal gain and regeneration to permit a fan out capability, which allows multiple optical NOR gates to be interconnected together or to be interconnected to the optical NAND gates. |
| Novelty: The optical NOR gate (10) has pairs of optical waveguide devices (24) that are formed on a substrate (12), and having electroabsorption modulators (14,18) joined to photodetectors (16,20), respectively. The photodetectors receive digital optical inputs (110,130) to generate photocurrent signal, which changes the reverse-bias voltage on the electroabsorption modulators, such that a digitally-modulated output (120) is generated from continuous light input (100), and converted into NOR function digital optical output (140). |
| Filed: 11/13/2008 |
| Application Number: US2008270221A |
| Tech ID: SD 11102.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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