| Abstract: | A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer. |