Die singulation method
| DWPI Title: Singulating method for die from semiconductor substrate, involves catching singulated die in die pocket of release fixture after etching away oxide layer between trenches and singulating die from semiconductor substrate |
| Abstract: A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with an HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die. |
| Use: Singulating method for die from semiconductor substrate. |
| Advantage: Enable all of the die on the semiconductor wafer to be singulated simultaneously in a parallel process without attachment to a handle wafer which saves time and cost and increases yield and performance by minimizing die handling and particulates which might occur if conventional sawing are used to singulate the die. Eliminates the use of adhesives to attach the die and the substrate that eliminates the need to clean to remove the adhesive from the singulated die. |
| Novelty: The die singulating method (100) involves anisotropically etching a first trench in the semiconductor substrate (10) around a die (12) to be singulated to expose one side of oxide layer (14) (104). The second trench is etched around the die to be singulated to expose the other side of oxide layer (106). A release fixture (28) is provided proximate to the substrate (110). The oxide layer is etched away between the trenches which singulates the die from the semiconductor substrate (108). The singulated die is caught in the die pocket (30) of the release fixture. |
| Filed: 4/13/2010 |
| Application Number: US2010758838A |
| Tech ID: SD 11059.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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