Heterogeneous integration of an electro-optical platform

DWPI Title: Hybrid photonic integrated circuit for use in optical fiber communication field, has silicon photonic waveguiding components coupled to first of third-fifth die to support first hybrid optical mode that is partly confined in first of third-fifth die
Abstract: A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.
Use: Hybrid photonic integrated circuit for use in optical fiber communication and photonic computing.
Advantage: The circuit can combine lithium niobate-based modulation with convenience and versatility of a silicon photonic platform. The circuit can provide relatively efficient coupling to optical fiber, and support greater optical power than silicon in an easy manner.
Novelty: The circuit has a silicon photonic functional layer (100) comprising a top silicon layer, a buried oxide layer. An optical or optoelectronic component is formed in the top silicon layer. A lithium niobate thin film is bonded to the silicon photonic functional layer. The silicon photonic functional layer is provided with multiple silicon photonic waveguiding components. A first of the silicon photonic waveguiding components is adapted to be optically coupled to a first of a third-fifth die to support first hybrid optical mode that is partly confined in the first of the third-fifth die.
Filed: 4/5/2021
Application Number: US17221949A
Tech ID: SD 15263.1
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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