Waveguide device and method for making same
| DWPI Title: Micromachined microwave device comprises uniplanar monolithic circuitry with waveguide channel formed in metal plate layer, where vertices of channel comprise sidewalls with a finish of specific optical quality smoothness |
| Abstract: A monolithic micromachined waveguide device or devices with low-loss, high-power handling, and near-optical frequency ranges is set forth. The waveguide and integrated devices are capable of transmitting near-optical frequencies due to optical-quality sidewall roughness. The device or devices are fabricated in parallel, may be mass produced using a LIGA manufacturing process, and may include a passive component such as a diplexer and/or an active capping layer capable of particularized signal processing of the waveforms propagated by the waveguide. |
| Use: For the transmission of energy within or near the microwave region of the electromagnetic spectrum. |
| Advantage: The device has low-loss, high-power handling, and near-optical frequency ranges. The device is fabricated in parallel, may be mass produced using LIGA manufacturing process, and may include a passive component such as diplexer and/or active capping layer capable of particularized processing of the waveforms propagated by the waveguide. The device can be formed with high-aspect ratios including channels with heights of many hundreds of microns (or up to ∼ 3 mm) and lateral widths of much less than a single micron (or ∼ 0.2 μm), and the ability to transmit frequencies of 1-300 GHz. |
| Novelty: A micromachined microwave device comprises uniplanar monolithic circuitry with waveguide channel(s) (150) formed in a metal plate layer capped with a metal or metallized cap layer. Vertices (140) of the channel comprise sidewalls with a finish of optical quality smoothness of less than 50 nm rms roughness to allow for transmission of various frequencies including near-optical frequencies of up to ∼ 300 GHz. The sidewalls create an angle of 89.9-90.1° in relation to a bottom of the channel. The circuit is capable of achieving attenuation of ≥0.064 dB/cm at 15.5 GHz. |
| Filed: 6/8/2005 |
| Application Number: US2005149404A |
| Tech ID: SD 8514.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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