Vertical III-nitride thin-film power diode

Patent Number: 9,595,616
Issued: 3/14/2017
Official Filing: View the Complete Patent
Abstract: A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.
Filed: 12/2/2015
Application Number: 14/957,012
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.