Varactor with integrated micro-discharge source
| DWPI Title: Varactor with integrated micro-discharge source for use in electronic device, includes aperture which receives gas which is converted to plasma responsive to voltage being applied across np junction |
| Abstract: An apparatus that includes a varactor element and an integrated micro-discharge source is disclosed herein. In a general embodiment, the apparatus includes at least one np junction and at least one voltage source that is configured to apply voltage across the np junction. The apparatus further includes an aperture that extends through the np junction. When the voltage is applied across the np junction, gas in the aperture is ionized, forming a plasma, in turn causing a micro-discharge (of light, charge particles, and space charge) to occur. The light (charge particles, and space charge) impinges upon the surface of the np junction exposed in the aperture, thereby altering capacitance of the np junction. When used within an oscillator circuit, the effect of the plasma on the np-junction extends the capacitance changes of the np-junction and extends the oscillator frequency range in ways not possible by a conventional voltage controlled oscillator (VCO). |
| Use: Varactor with integrated micro-discharge source for use in electronic device (claimed). Uses include but are not limited to a semiconductor chip included in a mobile telephone, a television, or a wireless computing device (e.g., a tablet computing device, a laptop computing device, a wearable computing device). |
| Advantage: The utilization of two control parameters to set the capacitance of the np junction of the varactor can allow for a desired capacitance to be reached more quickly when compared to conventional varactors, thus allowing, for example, a resonant circuit that includes the varactor to reach its resonant frequency more quickly when compared to conventional resonant circuits. Inclusion of multiple apertures in the varactor allows for (simultaneous) formation of micro-discharges in the apertures, thus enhancing the effect of capacitance change caused by photons impinging upon exposed portions of the np junction in the apertures. |
| Novelty: The varactor (100) includes a layer of p-type material (104), a layer of n-type material (102), and an np junction (106) formed between the layer of p-type material and the layer of n-type material. An aperture (108) extends at least partially through the layer of p-type material, at least partially through the layer of n-type material, and entirely through the np junction. Gas is disposed in the aperture. The gas is converted to plasma (304) responsive to the voltage being applied across the np junction. |
| Filed: 9/2/2015 |
| Application Number: US14843060A |
| Tech ID: SD 13569.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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