Transistor with curvilinear gate configuration for improved thermal distribution
| DWPI Title: Transistor apparatus, e.g. high electron mobility transistor for use in solid-state device used in high-voltage and high-power electronics, has gate electrode with multiple gate fingers that extend laterally across active device area between source fingers and multiple drain fingers |
| Abstract: There is provided a transistor apparatus of the kind in which a gate electrode includes one or more gate fingers that extend laterally across a device area. At least one gate finger is not rectilinear, but instead describes two or more meanders about an average path across the device area. The meanders can be tapered such that a taper amplitude is smallest in a central part of the gate finger and increases toward end portions of the gate finger. |
| Use: Transistor apparatus e.g. high electron mobility transistor (HEMT), such as aluminum gallium nitride (AlGaN) HEMT (all claimed), high electro-mobility transistors and ultra-wide bandgap AlGaN-GaN HEMTs for use in a solid-state device used in high-voltage and high-power electronics. |
| Advantage: The device geometry reduces the channel temperature and makes it more uniform by distributing the heat more evenly over the device area. The total number of gate fingers is reduced that reduces the rise in temperature at the inner gates. |
| Novelty: The transistor apparatus has a gate electrode with multiple gate fingers that extend laterally across an active device area between the source fingers and multiple drain fingers. At least one gate finger describes two or more in-plane meanders about an average path across the active device area. A shape of the two or more in-plane meanders comprises an amplitude-modulated sinusoid, where in-plane meanders are tapered, such that a taper amplitude is smallest in a central portion of the gate finger and increases toward end portions of the gate finger. |
| Filed: 4/25/2022 |
| Application Number: US17728330A |
| Tech ID: SD 15429.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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