| Abstract: | Various technologies pertaining to formation or treatment of a thallium
bromide crystal to improve the operable lifespan of a device that
incorporates the thallium bromide crystal are described herein. In
exemplary embodiments, treatments including focused ion beam
implantation, selective material removal, and buffer layer application
are performed on a thallium bromide crystal to inhibit motion of
dislocations toward a region at which an electrical contact is desirably
installed. In other exemplary embodiments, a thallium bromide crystal is
doped with impurities during formation that inhibit the motion of
dislocations in the crystal. In still other exemplary embodiments, a
thallium bromide crystal is formed by way of processes that inhibit
dislocation formation during crystal growth or eliminate dislocations in
an existing thallium bromide mass. |