Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system
| DWPI Title: Manufacturing or treating thallium bromide crystal to inhibit formation/migration of dislocations within crystalline lattice structures, involves implanting oxygen in surface of thallium bromide element having crystalline structure |
| Abstract: Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass. |
| Use: Method for manufacturing or treating thallium bromide crystal to inhibit formation or migration of dislocations within crystalline lattice structures of thallium bromide. |
| Advantage: The method enables to create of thallium bromide crystal-based devices with longer operable life span by inhibiting formation or mobility of dislocations within a TlBr crystal lattice. |
| Novelty: Manufacturing or treating thallium bromide (TlBr) crystal to inhibit formation or migration of dislocations within crystalline lattice structures of thallium bromide involves forming a thallium bromide element that has a crystalline structure and performing a treatment to the thallium bromide element, where the treatment is configured to inhibit formation or migration of dislocations in the crystalline structure of the thallium bromide element, and it comprises implanting oxygen in a surface of the thallium bromide element by way of an ion beam. |
| Filed: 1/4/2018 |
| Application Number: US15862307A |
| Tech ID: SD 14052.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Data from Derwent World Patents Index, provided by Clarivate All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |