Test circuits for integrated circuit counterfeit detection
| DWPI Title: Method for determining whether an integrated circuit is fabricated at a particular semiconductor fabrication facility, involves comparing a test signature with a standard signature, and assigning the label for integrated circuits |
| Abstract: Described herein are various technologies pertaining to identifying counterfeit integrated circuits (ICs) by way of allowing the origin of fabrication to be verified. An IC comprises a main circuit and a test circuit that is independent of the main circuit. The test circuit comprises at least one ring oscillator (RO) signal that, when energized, is configured to output a signal that is indicative of a semiconductor fabrication facility where the IC was manufactured. |
| Use: Method for determining whether an integrated circuit is fabricated at a particular semiconductor fabrication facility. |
| Advantage: Critical dimensions of circuit designs reduces the variations and enhances the yield. |
| Novelty: The method involves comparing a test signature (218) with a standard signature (212). The test signature is based upon an output signal from a test circuit (130) integrated in an integrated circuit (IC). The output signal is based upon signals emitted by each of the ring oscillator (RO) circuits, where each RO circuit is non-identical to each other RO circuit. The multiple RO circuit has a first RO circuit that has a first trace of a first width and a second RO circuit has a second trace of a second width. The first width is greater than the second width. A label is assigned to the IC after the comparison of test signature with standard signature. The IC manufactured at the semiconductor fabrication facility is approved by label indicated on the IC. The RO circuit of the test circuit in an IC is energized. The test signature based upon the portion of the output signal. |
| Filed: 7/24/2018 |
| Application Number: US16044007A |
| Tech ID: SD 12533.2 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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