Systems and methods to maintain optimum stoichiometry for reactively sputtered films

Patent Number: 10,074,522
Issued: 9/11/2018
Official Filing: View the Complete Patent
Abstract: The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.
Filed: 3/27/2015
Application Number: 14/671,284
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.