Systems and methods to maintain optimum stoichiometry for reactively sputtered films
| DWPI Title: Method for calibrating plasma vapor deposition tool for preparing e.g. transition metal oxide film, for memristor device, involves designating predicted feedback reference measurement value as target value for feedback control of film |
| Abstract: The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film. |
| Use: Method for calibrating a plasma vapor deposition (PVD) tool for preparing a film e.g. transition metal oxide film and sub-stoichiometric thin film, for a memristor device. |
| Advantage: The method enables simplifying PVD tool calibrating process to deposit stoichiometries in unstable range while reducing time, effort and cost required to maintain calibration. The method ensures reproducibility in film deposition with minimal additional cost. |
| Novelty: The method involves accessing a predetermined mapping between accessible compositions of a transition metal oxide film and corresponding positions on range from a first setpoint to a second setpoint. A position on the range from the first setpoint to the second setpoint is selected from the mapping that corresponds to specified sub-stoichiometric composition. A feedback reference measurement value is predicted from the designated first and second endpoints that correspond to the selected position on the range from the first setpoint to the second setpoint. The predicted feedback reference measurement value is designated as a target value for feedback control of the transition metal oxide film. |
| Filed: 3/27/2015 |
| Application Number: US14671284A |
| Tech ID: SD 12764.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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