| Abstract: | An infrared focal plane array (FPA) is disclosed which utilizes a
strained-layer superlattice (SLS) formed of alternating layers of InAs
and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on
a GaSb substrate. The FPA avoids the use of a mesa structure to isolate
each photodetector element and instead uses impurity-doped regions formed
in or about each photodetector for electrical isolation. This results in
a substantially-planar structure in which the SLS is unbroken across the
entire width of a 2-D array of the photodetector elements which are
capped with an epitaxially-grown passivation layer to reduce or eliminate
surface recombination. The FPA has applications for use in the wavelength
range of 3-25 .mu.m. |