Solid-state tuning behavior in acoustic resonators

DWPI Title: Tuning device for tunable resonator, has electrodes that apply electrical bias to microresonator to provide second resonant frequency that is different than first resonant frequency
Abstract: The present invention relates to tunable microresonators, as well as methods of designing and tuning such resonators. In particular, tuning includes applying an electrical bias to the resonator, thereby shifting the resonant frequency.
Use: Tunable microresonator such as Lamb wave microresonator, shear mode Lamb wave resonator or symmetric mode Lamb wave resonator for use in adaptive communications system e.g. radio frequency (RF) communication system.
Advantage: The resonator has high performance metrics, and is designed with high adaptivity. The resonant frequency of the microresonator is changed by applying the electrical bias to the electrodes, thus providing the resonator with different resonant frequencies, and hence improving the performance of the device.
Novelty: The device has a microresonator (100) that is characterized by a first resonant frequency. The microresonator comprises a resonating portion (111) that comprises a piezoelectric material. The piezoelectric material comprises an acoustic wave propagating. The resonating portion is embedded in an acoustic isolation element such that the acoustic isolation element is arranged between the resonating portion and a support structure (110). First electrodes are configured to apply an electrical bias to the resonating portion, thus shifting the first resonant frequency to a second resonant frequency that is different than the first resonant frequency.
Filed: 6/26/2020
Application Number: US16912916A
Tech ID: SD 14724.1
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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