|Abstract: ||The present disclosure relates to resistive field structures that provide
improved electric field profiles when used with a semiconductor device.
In particular, the resistive field structures provide a uniform electric
field profile, thereby enhancing breakdown voltage and improving
reliability. In example, the structure is a field cage that is configured
to be resistive, in which the potential changes significantly over the
distance of the cage. In another example, the structure is a resistive
field plate. Using these resistive field structures, the characteristics
of the electric field profile can be independently modulated from the
physical parameters of the semiconductor device. Additional methods and
architectures are described herein.