Resistive field structures for semiconductor devices and uses therof
| DWPI Title: Apparatus comprises semiconductor device which has source, gate, and drain, and resistive field cage which is coupled to semiconductor device and has resistive element containing resistive material and a set of field cage taps |
| Abstract: The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein. |
| Use: An apparatus with resistive field structures. |
| Advantage: The device design and reliability are strongly coupled through the electric field. The resistive field structures provide improved electric field profiles when used with a semiconductor device, particularly providing a uniform electric field profile which enhances breakdown voltage and improves reliability. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. The resistive element includes structural dimensions (e.g., geometry, length, width, and/or thickness) to provide sufficient current leakage through the semiconductor device, allowing resistive operation of the field cage to be independent of the structural features of the semiconductor device. |
| Novelty: An apparatus (100) comprises semiconductor device which has source (110), gate (130), and drain (120); and resistive field cage which is coupled to semiconductor device and has resistive element (160) containing resistive material, electrically coupled between source and drain of semiconductor device, and a set of n field cage taps (141, 142, 143, 144), where n is an integer of 3-20, disposed above the semiconductor device and between the source and the drain, with each of the n field cage taps being electrically coupled between top surface of semiconductor device and resistive element. |
| Filed: 1/6/2016 |
| Application Number: US14989633A |
| Tech ID: SD 12672.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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