Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
| Patent Number: | 10,553,697 |
| Issued: | 2/4/2020 |
| Official Filing: | View the Complete Patent |
| Abstract: | Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. The regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided. |
| Filed: | 4/16/2019 |
| Application Number: | 16/385,193 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |