Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures
| Patent Number: | 9,276,382 |
| Issued: | 3/1/2016 |
| Official Filing: | View the Complete Patent |
| Abstract: | Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. |
| Filed: | 2/17/2015 |
| Application Number: | 14/624,074 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |