| Abstract: A method includes forming a release layer over a donor substrate. A
plurality of devices made of a first semiconductor material are formed
over the release layer. A first dielectric layer is formed over the
plurality of devices such that all exposed surfaces of the plurality of
devices are covered by the first dielectric layer. The plurality of
devices are chemically attached to a receiving device made of a second
semiconductor material different than the first semiconductor material,
the receiving device having a receiving substrate attached to a surface
of the receiving device opposite the plurality of devices. The release
layer is etched to release the donor substrate from the plurality of
devices. A second dielectric layer is applied over the plurality of
devices and the receiving device to mechanically attach the plurality of
devices to the receiving device. |
| Filed: 9/26/2012 |
| Application Number: 13/627425 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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