| Abstract: Plasmon absorption modulator systems and methods are disclosed. A plasmon
absorption modulator system includes a semiconductor substrate, a
plurality of quantum well layers stacked on a top surface of the
semiconductor substrate, and a metal layer formed on a top surface of the
stack of quantum well layers. A method for modulating plasmonic current
includes enabling propagation of the plasmonic current along a metal
layer, and applying a voltage across the stack of quantum well layers to
cause absorption of a portion of energy of the plasmonic current by the
stack of quantum well layers. A metamaterial switching system includes a
semiconductor substrate, a plurality of quantum well layers stacked on a
top surface of the semiconductor substrate, and at least one metamaterial
structure formed on a top surface of the stack of quantum well layers. |
| Filed: 2/2/2012 |
| Application Number: 13/364832 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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