Photoconductive metasurface-based ultrafast device
| DWPI Title: Apparatus used for providing photoconductive response to optical excitation, comprises all-dielectric metasurface arranged on substrate surface, and electrode arrangement electrically connected to all-dielectric metasurface comprising array of dielectric Mie resonators |
| Abstract: A theoretically perfectly absorbing photoconductive all-dielectric metasurface is provided. This metasurface can improve the efficiency and performance of ultrafast photoconductive switches and detectors. In an embodiment, the metasurface is incorporated in photoconductive THz switches or detectors. In embodiments, the metasurface is constituted by a network of gallium arsenide resonators. Each resonator supports two degenerate and critically coupled magnetic dipole modes. Simultaneous excitation of these two modes leads to theoretically close-to-perfect optical absorption near the resonant wavelength. |
| Use: Apparatus used for providing photoconductive response to optical excitation. |
| Advantage: The apparatus can improve the conversion efficiency without the drawbacks of known plasmonic structures, and is that high optical absorption is achieved because of engineered resonance effects in the metasurface, even though the metasurface is optically thin, and includes all-dielectric metasurface, which efficiently absorbs light while concurrently forming an electrically connected network, under optical excitation, the resulting device can switch rapidly between OFF and ON conductivity states with high contrast. |
| Novelty: Apparatus comprises an all-dielectric metasurface arranged on a substrate surface, and an electrode arrangement electrically connected to the all-dielectric metasurface. The all-dielectric metasurface comprises an array of dielectric Mie resonators (105). The Mie resonators incorporate features that collectively interconnect the Mie resonators in a network that carries electric current when in operation. The features collectively interconnect the Mie resonators have a configuration that prevents the Mie resonators in which they are incorporated from having more than one symmetry plane normal to the substrate surface. |
| Filed: 7/30/2020 |
| Application Number: US16943001A |
| Tech ID: SD 14895.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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