Optoelectronic apparatus enabled by dielectric metamaterials
| DWPI Title: Optoelectronic apparatus has dielectric resonators in array comprises active medium by optical transition and dielectric resonators in array that dimensioned in three dimensions to provide Mie resonance which lies at frequency |
| Abstract: An array of dielectric resonators is formed on the substrate of an optoelectronic device. Each resonator includes an active medium having an optical transition that is operative in a process of photodetection or photoemission. The dielectric resonators in the array are each dimensioned to provide a resonance that lies substantially at the frequency of the optical transition. |
| Use: Optoelectronic apparatus. |
| Advantage: The array spacing is small enough to support mutual electromagnetic interactions among the resonators that tend to suppress radiation parallel to the substrate. The field enhancement can lead to active optical and electro-optical devices having ultralow power consumption and other performance advantages relative to conventional counterparts, when active optical media are incorporated in the resonator structures. The field enhancement can potentially produce enhanced photoemission and photo-absorption, reduce lasing thresholds, and increase lasing power levels. The loss from the overall resonator structure is reduced. |
| Novelty: The apparatus has a substrate (60) and an optical metamaterial. The optical metamaterial consists of an array of dielectric resonators formed on the substrate. Each of the dielectric resonators in the array comprises an active medium characterized by at least one optical transition thus light is emitted and/or absorbed with a frequency and a vacuum wavelength. The dielectric resonators in the array are each dimensioned in three dimensions to provide a Mie resonance that lies at the frequency. The substrate, a base layer (80), and the cap layer are composed of gallium arsenide. Each period comprises a layer of gallium arsenide adjacent to a layer of indium gallium arsenide. |
| Filed: 6/16/2016 |
| Application Number: US15184929A |
| Tech ID: SD 13585.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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