Monolithically integrated infrared transceiver
| DWPI Title: Monolithically integrated infrared transceiver for e.g. imaging application, has different layers formed on bottom cladding layer, and diode comprising contact recessed into top layer such that field couples to depletion region of diode |
| Abstract: A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency. |
| Use: Monolithically integrated infrared transceiver for imaging and radar type applications. |
| Advantage: The transceiver allows infrared quantum cascade laser waveguide to balance pulling a laser mode close enough to a surface to increase coupling to a diode against keeping a mode far enough away to maintain low enough waveguide loss to allow lasing to occur. The transceiver decreases an anode area to reduce junction capacitance, so that the fields couple into a depletion region. |
| Novelty: The transceiver has an infrared semiconductor laser comprising a layered semiconductor heterostructure active region comprising different semiconductor layers on a bottom cladding layer. A top cladding layer comprises doped semiconductor layers on the active region by providing a laser waveguide between the top and bottom cladding layers for confinement of a mode field of the infrared semiconductor laser in the top cladding layer. A Schottky diode comprises a rectifying metal contact recessed into the top cladding layer such that the mode field couples to a depletion region of the diode. |
| Filed: 12/18/2014 |
| Application Number: US14575430A |
| Tech ID: SD 12918.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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