Methods for resistive switching of memristors

DWPI Title: Method for operating resistive memory device e.g. resistive RAM (RRAM) involves applying isothermal model to power-resistance measurement in order to determine parameters of device
Abstract: The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).
Use: Method for operating resistive memory device e.g. resistive RAM (RRAM).
Advantage: The model is time-independent, thereby providing a simplified model that need not require intensive computing power. The analytical nature of the solution provides a compact and efficient method to explore device performance dependencies on design parameters. The presence of bipolar motion is assumed due to drift and specifying when thermally allowed are all that to describe the state evolution, and circumvents specifying additional complex microscopic mechanisms.
Novelty: The method involves providing a device that comprises a reactive electrode and an insulator which is configured to provide a first filament mounted within insulator. The device is coupled to a monitoring apparatus. A power-resistance measurement for device is generated by employing the monitoring apparatus. An isothermal model is applied to power-resistance measurement in order to determine more parameters of device. The isothermal model comprises a steady state heat flow model of the filament.
Filed: 2/3/2015
Application Number: US14612958A
Tech ID: SD 13146.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
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