Method to grow group III-nitrides on copper using passivation layers
| Patent Number: | 8,741,748 |
| Issued: | 6/3/2014 |
| Official Filing: | View the Complete Patent |
| Abstract: | Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu. |
| Filed: | 3/15/2013 |
| Application Number: | 13/836,594 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |