| Abstract: Thermally isolated devices may be formed by performing a series of etches
on a silicon-based substrate. As a result of the series of etches,
silicon material may be removed from underneath a region of an integrated
circuit (IC). The removal of the silicon material from underneath the IC
forms a gap between remaining substrate and the integrated circuit,
though the integrated circuit remains connected to the substrate via a
support bar arrangement that suspends the integrated circuit over the
substrate. The creation of this gap functions to release the device from
the substrate and create a thermally-isolated integrated circuit. |
| Filed: 8/11/2016 |
| Application Number: 15/234932 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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