Method of making a silicon nanowire device
| DWPI Title: Method for fabricating electronic device, involves forming contacts over contact holes and etching, removing silicon oxide of interlayer dielectric layer from under, over and around nanowire for completing integrated circuit |
| Abstract: There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 μm in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation. The method, in examples, includes thinning the nanowire through iterative oxidation and etching of the oxidized portion. |
| Use: Method for fabricating an electronic device. |
| Advantage: The method enables modifying nanowire cross-sectional dimension and shape by anneal to generate a hexagonal, energy minimized configuration. The method enables realizing that integration of silicon nanowires on complementary metal-oxide-semiconductor platforms is very desirable due to possibility of compact and cost-effective packaging of complete electronic hardware systems whose components include nanowire-based sensors. |
| Novelty: The method involves depositing a top gate polysilicon layer over an interlayer dielectric layer (ILD) and support structures, and patterning and etching the polysilicon layer to form a top gate electrode. Another interlayer dielectric layer of silicon oxide is deposited over the former ILD and the electrode. Contact holes are etched through ILDs for contact with a source region, a drain region and the electrode. Platinum contacts (90) are formed over the holes. Silicon oxide of the ILDs is etched and removed from under, over and around a nanowire for completing an integrated circuit. |
| Filed: 11/17/2016 |
| Application Number: US15354196A |
| Tech ID: SD 12077.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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