| Abstract: A top-down method of fabricating vertically aligned Group III-V micro-
and nanowires uses a two-step etch process that adds a selective
anisotropic wet etch after an initial plasma etch to remove the dry etch
damage while enabling micro/nanowires with straight and smooth faceted
sidewalls and controllable diameters independent of pitch. The method
enables the fabrication of nanowire lasers, LEDs, and solar cells. |
| Filed: 1/17/2013 |
| Application Number: 13/743433 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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