Memristor using a transition metal nitride insulator

Patent Number: 8,872,246
Issued: 10/28/2014
Official Filing: View the Complete Patent
Abstract: Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.
Filed: 1/25/2013
Application Number: 13/750,451
Related Opportunity: Full Stack Neuromorphic
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.