| Abstract: The various technologies presented herein relate to a three dimensional
manufacturing technique for application with semiconductor technologies.
A membrane layer can be formed over a cavity. An opening can be formed in
the membrane such that the membrane can act as a mask layer to the
underlying wall surfaces and bottom surface of the cavity. A beam to
facilitate an operation comprising any of implantation, etching or
deposition can be directed through the opening onto the underlying
surface, with the opening acting as a mask to control the area of the
underlying surfaces on which any of implantation occurs, material is
removed, and/or material is deposited. The membrane can be removed, a new
membrane placed over the cavity and a new opening formed to facilitate
another implantation, etching, or deposition operation. By changing the
direction of the beam different wall/bottom surfaces can be utilized to
form a plurality of structures. |
| Filed: 9/3/2013 |
| Application Number: 14/17132 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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