Lateral vias for connections to buried microconductors and methods thereof
| DWPI Title: Method for creating a lateral vertical interconnect access to provide an electrical connection to buried conductor, involves forming microhole within component having buried conductor, where microhole provides access to the buried conductor |
| Abstract: The present invention relates to a lateral via to provide an electrical connection to a buried conductor. In one instance, the buried conductor is a through via that extends along a first dimension, and the lateral via extends along a second dimension that is generally orthogonal to the first dimension. In another instance, the second dimension is oblique to the first dimension. Components having such lateral vias, as well as methods for creating such lateral vias are described herein. |
| Use: Method for creating a lateral vertical interconnect access, such as targeted through silicon vertical interconnect access, to provide an electrical connection to a buried conductor for use in three-dimensional integration components, such as field-programmable gate arrays and memory devices. |
| Advantage: The semi-destructive process is effectively performed to access and to connect targeted through silicon vertical interconnect accesses and solder bumps on three-dimensional integration components. |
| Novelty: The method (300) involves forming (302) a microhole within a component having a buried conductor, where the microhole provides access to the buried conductor. A conductive material is deposited (303) within the microhole to provide an electrical connection to the buried conductor, where the conductive material partially or completely fills the microhole. The component has a first longitudinal dimension extending between a top surface and a bottom surface of the component. The microhole has a second longitudinal dimension extending along a length of the microhole. |
| Filed: 5/15/2018 |
| Application Number: US15980546A |
| Tech ID: SD 13473.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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