Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices
| DWPI Title: Broad-beam laser irradiation apparatus for measuring e.g. dose-rate response of semiconductor device under test, has measuring unit measuring functional or parametric response to charge that is generated in active region |
| Abstract: A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light. |
| Use: Broad-beam laser irradiation apparatus for measuring a dose-rate response of a semiconductor device under test, and for measuring a parametric or functional response of a semiconductor device that is exposed to dose-rate equivalent infrared laser light. |
| Advantage: The measuring unit measures the functional or parametric response to charge that is generated in the electrically active region of the semiconductor device resulting from the laser irradiation of the surface of the semiconductor device, thus efficiently measuring a parametric or functional response of the semiconductor device that is being exposed to dose-rate equivalent infrared laser light. |
| Novelty: The apparatus (40) has an infrared laser for producing a broad-area pulse of laser light with laser pulse width and intensity directed onto a surface of a semiconductor device. A measuring unit measures a functional or parametric response to charge that is generated in an electrically active region of the device resulting from the laser irradiation of the surface of the device. A wavelength of the infrared laser provides a penetration depth comparable to a length-scale for charge collection of photocurrent in the region of the device. |
| Filed: 3/2/2006 |
| Application Number: US2006366289A |
| Tech ID: SD 7425.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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