Ionic floating-gate memory device
| Patent Number: | 10,497,866 |
| Issued: | 12/3/2019 |
| Official Filing: | View the Complete Patent |
| Abstract: | A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element. |
| Filed: | 6/19/2018 |
| Application Number: | 16/12,430 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |