Ion-implanted thermal barrier
| Patent Number: | 10,418,304 |
| Issued: | 9/17/2019 |
| Official Filing: | View the Complete Patent |
| Abstract: | Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance. |
| Filed: | 8/21/2018 |
| Application Number: | 16/107,470 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |