Ion-implanted thermal barrier
| DWPI Title: Ion implanted thermal barrier for thermal conduction in microelectronic devices, comprises a ion-implanted region between a hot device and a cool device on a substrate and the substrate includes a microelectronic chip |
| Abstract: Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance. |
| Use: Ion implanted thermal barrier for thermal conduction in microelectronic devices. |
| Advantage: Better thermal isolation of microelectronic device is ensured. Heated area away from the hot device can be decreased through proper depths and thicknesses of the xenon implant. |
| Novelty: The ion implanted thermal barrier comprises a ion-implanted region between a hot device and a cool device on a substrate. The implanted ion includes a noble gas ion. The noble gas ion includes krypton or xenon. The substrate includes silicon, silicon carbide, diamond, gallium nitride, or gallium arsenide. The substrate includes a microelectronic chip. |
| Filed: 8/21/2018 |
| Application Number: US16107470A |
| Tech ID: SD 12892.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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