| Abstract: A neutron detector with monolithically integrated readout circuitry,
including: a bonded semiconductor die; an ion chamber formed in the
bonded semiconductor die; a first electrode and a second electrode formed
in the ion chamber; a neutron absorbing material filling the ion chamber;
and the readout circuitry which is electrically coupled to the first and
second electrodes. The bonded semiconductor die includes an etched
semiconductor substrate bonded to an active semiconductor substrate. The
readout circuitry is formed in a portion of the active semiconductor
substrate. The ion chamber has a substantially planar first surface on
which the first electrode is formed and a substantially planar second
surface, parallel to the first surface, on which the second electrode is
formed. The distance between the first electrode and the second electrode
may be equal to or less than the 50% attenuation length for neutrons in
the neutron absorbing material filling the ion chamber. |
| Filed: 7/26/2012 |
| Application Number: 13/559370 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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