Ion-barrier for memristors/ReRAM and methods thereof

Patent Number: 9,831,427
Issued: 11/28/2017
Official Filing: View the Complete Patent
Abstract: The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein.
Filed: 8/18/2015
Application Number: 14/829,440
Related Opportunity: Full Stack Neuromorphic
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.