Ion-barrier for memristors/ReRAM and methods thereof
| DWPI Title: Device such as memristive devices, has barrier element mounted between second conductive element and resistance-switching element to reduce diffusion of mobile oxygen ions |
| Abstract: The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein. |
| Use: Device such as memristive devices. |
| Advantage: The location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. The system includes use of a barrier element to increase that energy barrier, prolonging and/or retaining the device in the desired state. The reduction of Velectroforming is beneficial to improve device-to-device repeatability and to reduce device unpredictability. The proposed barrier element is designed to reduce movement of mobile species and thus, useful for reducing, suppressing, or stabilizing random telegraph noise. |
| Novelty: The device (100) has first and second conductive element (135,130), the second conductive element being an active conductive element exhibiting a high oxygen affinity. A resistance-switching element (120) mounted between the conductive elements and includes a transition metal-oxide film containing mobile oxygen ions to provide switching through their movement toward the second conductive element. The barrier element (110) comprises MaXb, M is a transition metal present in the resistance-switching element, X is a chalcogen selected from S or Se. |
| Filed: 8/18/2015 |
| Application Number: US14829440A |
| Tech ID: SD 12865.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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