| Abstract: The present invention relates to memristive devices including a
resistance-switching element and a barrier element. In particular
examples, the barrier element is a monolayer of a transition metal
chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions
out of the switching element. As the location of these atoms and ions
determine the state of the device, inhibiting diffusion would provide
enhanced state retention and device reliability. Other types of barrier
elements, as well as methods for forming such elements, are described
herein. |
| Filed: 8/18/2015 |
| Application Number: 14/829440 |
Related Opportunity:
Full Stack Neuromorphic
|
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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