Integration of a waveguide self-electrooptic effect device and a vertically coupled interconnect waveguide

DWPI Title: Directionally coupled self-electro optic effect device for e.g. optical logic device, has waveguide fabricated on gallium arsenide substrate and upper waveguide layer positioned to form vertical directional coupler with wave guide
Abstract: A self-electrooptic effect device ("SEED") is integrated with waveguide interconnects through the use of vertical directional couplers. Light initially propagating in the interconnect waveguide is vertically coupled to the active waveguide layer of the SEED and, if the SEED is in the transparent state, the light is coupled back to the interconnect waveguide.
Use: Directionally coupled self-electro optic effect device (SEED), for optical logic device and photonic logic circuit.
Advantage: The device is compact, and reduces loss due to absorption at the operating wavelength by vacancy-enhanced disordering of the multiple quantum well in the cross region.
Novelty: The device has a gallium arsenide substrate (340), a waveguide fabricated on the substrate, and a self-electro optic effect device (SEED) (300) fabricated on the substrate. The SEED has an upper waveguide layer (310) positioned to form a vertical directional coupler with the waveguide. The waveguide layer comprises a multiple quantum well (MQW) material. A spacer layer (312) is positioned between the waveguide layer of the SEED and a core layer of the waveguide. The spacer layer forms a rib for lateral confinement of light within the waveguide.
Filed: 12/13/2005
Application Number: US2005300557A
Tech ID: SD 7568.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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