| Abstract: A method for impurity-induced disordering in III-nitride materials
comprises growing a III-nitride heterostructure at a growth temperature
and doping the heterostructure layers with a dopant during or after the
growth of the heterostructure and post-growth annealing of the
heterostructure. The post-growth annealing temperature can be
sufficiently high to induce disorder of the heterostructure layer
interfaces. |
| Filed: 7/26/2012 |
| Application Number: 13/558516 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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