| Abstract: A silicon carbide based MOS integrated circuit is monolithically
integrated with a suspended piezoelectric aluminum nitride member to form
a high-temperature-capable hybrid MEMS-over-MOS structure. In the
integrated structure, a post-MOS passivation layer of silicon carbide is
deposited over the MOS passivation and overlain by a structural layer of
the MEMS device. Electrical contact to refractory metal conductors of the
MOS integrated circuit is provided by tungsten vias that are formed so as
to pass vertically through the structural layer and the post-MOS
passivation layer. |
| Filed: 3/2/2018 |
| Application Number: 15/910531 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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