| Abstract: Tailored doping of barrier layers enables balancing of the radiative
recombination among the multiple-quantum-wells in III-Nitride
light-emitting diodes. This tailored doping enables more symmetric
carrier transport and uniform carrier distribution which help to reduce
electron leakage and thus reduce the efficiency droop in high-power
III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs
may enable the pervasive market penetration of solid-state-lighting
technologies in high-power lighting and illumination. |
| Filed: 3/17/2011 |
| Application Number: 13/50673 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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