Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof
| DWPI Title: Method of fabricating integrated optoelectronic e.g. photodiode structure, involves introducing impurities, creating vacancies or heating through photodiode and into multiple-quantum-well (MQW) region and produces intermixed MQW region |
| Abstract: The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process. |
| Use: Method of fabricating integrated optoelectronic e.g. photodiode structure (claimed). |
| Advantage: The size, cost, weight and power dissipation are reduced and new functionality is provided by the monolithic integration of optoelectronic components. The need for a photodiode-specific epitaxial regrowth step is eliminated by the photodiode design. The bandedge of the quantum well residing within the waveguide core can be blue-shifted by diffusing point defects through the detector/photodiode structure and the ability to tailor the bandedge of the MQW with the detector layers is maintained. The quantum-well-intermixing (QWI) process is facilitated by capturing the vacancies created by ion implantation. The control of forming intermixed MQW regions is allowed as the removal of the implant layer halts diffusion of the vacancies. |
| Novelty: The method involves providing a base structure comprising a multiple-quantum-well (MQW) region (125) and a photodiode region (130) and the base structure comprises an implant layer (162) arranged above the photodiode region. A top surface of the base structure is patterned (102) with a mask to define an active region and a passive region. A process (101) of introducing impurities, creating vacancies or heating is made through the photodiode region and into the MQW region that produces an intermixed MQW region (126) and a cladding layer (175) is deposited on the photodiode region. |
| Filed: 7/16/2015 |
| Application Number: US14801257A |
| Tech ID: SD 12666.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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