Graphene heat dissipating structure
| DWPI Title: Method for forming e.g. heat spreaders on substrate of electronic component, involves reapplying solution comprising diazonium molecules and graphene flakes, and reheating substrate to cause evaporation of solvent in reapplied solution |
| Abstract: Various technologies presented herein relate to forming one or more heat dissipating structures (e.g., heat spreaders and/or heat sinks) on a substrate, wherein the substrate forms part of an electronic component. The heat dissipating structures are formed from graphene, with advantage being taken of the high thermal conductivity of graphene. The graphene (e.g., in flake form) is attached to a diazonium molecule, and further, the diazonium molecule is utilized to attach the graphene to material forming the substrate. A surface of the substrate is treated to comprise oxide-containing regions and also oxide-free regions having underlying silicon exposed. The diazonium molecule attaches to the oxide-free regions, wherein the diazonium molecule bonds (e.g., covalently) to the exposed silicon. Attachment of the diazonium plus graphene molecule is optionally repeated to enable formation of a heat dissipating structure of a required height. |
| Use: Method for forming graphene heat dissipating structures e.g. heat spreaders and heat sinks, on a substrate of an electronic component. Uses include but are not limited to a power device, die-level packaged integrated circuit, semiconductor-containing device, amplifier chip set for radio frequency (RF) applications, complementary metal-oxide-semiconductor (CMOS) i.e. radiation hardened CMOS, silicon-based device i.e. silicon-germanium device, macro-scale lithium battery, transformer and a capacitor bank in an industrial environment. |
| Advantage: The method enables facilitating the graphene heat dissipating structure to be atomically close to a surface of the substrate to enable minimization of an air gap at a substrate surface with high thermal conductivity of graphene material, while reducing component size and preventing the generated heat from deleteriously affecting operation of the component. |
| Novelty: The method involves removing first material from a portion of a surface of a substrate (110) to expose underlying second material. A solution is applied to the exposed second material. The substrate is heated to evaporate a solvent in the solution. The solution comprising first and second diazonium molecules and first and second graphene flakes is reapplied. The substrate is reheated to cause evaporation of the solvent in the reapplied solution, where the second diazonium molecule with the attached second graphene flake bonds to the first graphene flake attached to the first diazonium molecule. |
| Filed: 6/8/2017 |
| Application Number: US15618000A |
| Tech ID: SD 12741.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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