Graphene heat dissipating structure
| DWPI Title: Graphene heat dissipating structure of heat spreaders and heat sinks for power device, has subset of particles and non-oxide substrate material attached through diazonium molecules in subset of particles |
| Abstract: Various technologies presented herein relate to forming one or more heat dissipating structures (e.g., heat spreaders and/or heat sinks) on a substrate, wherein the substrate forms part of an electronic component. The heat dissipating structures are formed from graphene, with advantage being taken of the high thermal conductivity of graphene. The graphene (e.g., in flake form) is attached to a diazonium molecule, and further, the diazonium molecule is utilized to attach the graphene to material forming the substrate. A surface of the substrate is treated to comprise oxide-containing regions and also oxide-free regions having underlying silicon exposed. The diazonium molecule attaches to the oxide-free regions, wherein the diazonium molecule bonds (e.g., covalently) to the exposed silicon. Attachment of the diazonium plus graphene molecule is optionally repeated to enable formation of a heat dissipating structure of a required height. |
| Use: Graphene heat dissipating structure of heat spreaders and heat sinks for power device, die level packaged integrated circuit and semiconductor-containing device. Can also be used in amplifier chip sets for radio frequency (RF) applications e.g. high power applications, complementary metal-oxide-semiconductors (CMOS) e.g. radiation hardened CMOS, silicon-based devices such as silicon-germanium (SiGe) devices, macro-scale lithium batteries, high power transformers and capacitor banks for various applications such as an industrial environment. |
| Advantage: The size of the component is reduced, and the generation of heat from deleteriously affecting operation of the component is prevented, due to the high thermal conductivity of the graphene material. |
| Novelty: The structure has a silicon carbide substrate (110) which comprises a surface including an oxide-free etched region and a silicon dioxide unetched region. A layer of material is formed on the non-oxide substrate material in the etched region. The layer has several particles which comprises diazonium molecule (150) and graphene molecule (160). A subset of particles is attached to the non-oxide substrate material exposed in the etched region. The subset of particles and the non-oxide substrate material are attached through diazonium molecules in the subset of particles. |
| Filed: 3/18/2015 |
| Application Number: US14662091A |
| Tech ID: SD 12741.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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