Gallium beam lithography for superconductive structure formation

Patent Number: 9,882,113
Issued: 1/30/2018
Official Filing: View the Complete Patent
Abstract: The present invention relates to the use of gallium beam lithography to form superconductive structures. Generally, the method includes exposing a surface to gallium to form an implanted region and then removing material adjacent to and/or below that implanted region. In particular embodiments, the methods herein provide microstructures and nanostructures in any useful substrate, such as those including niobium, tantalum, tungsten, or titanium.
Filed: 6/17/2015
Application Number: 14/742,505
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.