| Abstract: The present invention relates to the use of gallium beam lithography to
form superconductive structures. Generally, the method includes exposing
a surface to gallium to form an implanted region and then removing
material adjacent to and/or below that implanted region. In particular
embodiments, the methods herein provide microstructures and
nanostructures in any useful substrate, such as those including niobium,
tantalum, tungsten, or titanium. |
| Filed: 6/17/2015 |
| Application Number: 14/742505 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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