Gallium beam lithography for superconductive structure formation
| Patent Number: | 9,882,113 |
| Issued: | 1/30/2018 |
| Official Filing: | View the Complete Patent |
| Abstract: | The present invention relates to the use of gallium beam lithography to form superconductive structures. Generally, the method includes exposing a surface to gallium to form an implanted region and then removing material adjacent to and/or below that implanted region. In particular embodiments, the methods herein provide microstructures and nanostructures in any useful substrate, such as those including niobium, tantalum, tungsten, or titanium. |
| Filed: | 6/17/2015 |
| Application Number: | 14/742,505 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |