Full tape thickness feature conductors for EMI structures
| DWPI Title: Method for making full tape thickness feature conductor in ceramic layer, to produce slot-style fence for EMI structure, involves removing dielectric material to form tape layers, filling slot with material, and drying material in slot |
| Abstract: Generally annular full tape thickness conductors are formed in single or multiple tape layers, and then stacked to produce an annular solid conductive wall for enclosing an electromagnetic isolation cavity. The conductors may be formed using punch and fill operations, or by flowing conductor-containing material onto the tape edge surfaces that define the interior sidewalls of the cavity. |
| Use: Method for making a full tape thickness feature (FTTF) conductor in a dielectric tape layer i.e. low temperature co-fired ceramic (LTCC) layer, to produce a slot-style FTTF fence for an EMI structure. |
| Advantage: The method enables making the FTTF conductor in the dielectric tape layer with improved resistivity to produce the fences for the EMI structures in an efficient manner. The method enables ensuring solid wall construction that provides continuous FTTF conductors in each layer of the wall, thus eliminating isolation gaps of the slot-style FTTF fence. The method enables facilitating the solid wall construction with less material than the staggered slot-style FTTF fences, more compact structure, and reduced amount of required tape punching. |
| Novelty: The method involves removing dielectric material to form a slot through thickness of a lower tape layer (31A). The slot is filled with material. The material in the slot is dried. The tape layer and an upper tape layer (32A) are stacked to form a tape stack with the slot and another slot for overlapping relationship to one another. The dielectric material is removed to form the tape layers stacked in the tape stack, and a third slot in contact with the former slot and the latter slot. The third slot is filled with material. The material in the third slot is dried. |
| Filed: 7/9/2010 |
| Application Number: US2010833262A |
| Tech ID: SD 11365.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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